First， semiconductor laser based on the theory Although some literature that the author created in their respective semiconductor lasers in the important role played by， but the fact is no one on semiconductor laser to the emergence of a complete theoretical basis， nor an early worker for the realization of the study and solve the semiconductor laser All the technology Therefore， it can be that the semiconductor laser is the emergence and development of many co-workers on the crystallization of As early as in September 1953， the US F Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconductor produced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation Bading concluded Feng 'Newman on the basic theory of semiconductor laser after Through various means (for example， to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration， according to which non-minority-carrier in the compound and a The rate of its radiation can be like amplifiers， with the same frequency of electromagnetic It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the US radio company [RCA] Pankove start manufacturing the semiconductor June 1958 in Brussels of an international conference on the statement， first published in the semiconductor be coherent light of the views， but it was not until 1964 he published articles on the theory of semiconductor lasers and experimental Soviet Lebedev Physical Institute Basov (Basov)， and so on the outstanding contribution of semiconductor lasers， he is the first time in 1958 published an article in the semiconductor raised in the realization of negative-state (that is， population inversion) on the theory In 1961 they published the first carrier will be injected into the semiconductor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Produced by stimulated emission of the necessary conditions for) the possibility， but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference， creating optical waveguide After these theories to the emergence of semiconductor laser has played a positive role in promoting， Basuo Fu therefore be Nobel P However， in 1963， published by the Basuo Fu， and so on semiconductor laser experiment with the theory of the article is more active semiconductor materials for G And La Vieques (Lax) in 1959 made direct bandgap semiconductor (such as GaAs， InP， ) than the indirect bandgap semiconductor (such as Ge， Si， ) is more suited to produce stimulated emission of This important thesis for the accuracy of which appear later confirmed by the semiconductor 1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconductor and as a cleavage-feedback resonator， the strengthening of the laser is Laser optical resonator is an integral 1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use Derived the concept of energy meters in the semiconductor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconductor laser research has played an important guiding role of To sum up， in theory， that should be in the semiconductor laser direct bandgap semiconductor PN junction， with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion， from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and， finally have a coherent laser
